PART |
Description |
Maker |
HYB25M144180C HYB25R144180C HYB25M128160C |
144-Mbit direct RDRAM(144 Mbit 直接 RDRAM) 144-MBit Direct RDRAM(144 M位直接RDRAM) 144兆位的直接的RDRAM144米位直接的RDRAM 128-Mbit direct RDRAM(128 Mbit ?存? RDRAM)
|
SIEMENS AG
|
HYR1612820 HYR183220G-840 HYR1612820G-653 HYR18642 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) 直接的RDRAM RIMM的模块(44兆RDRAMs CONN HEADER .100 DUAL STR 72POS CONN HEADER .100 DUAL R/A 72POS 128M X 16 DIRECT RAMBUS DRAM MODULE, 2.06 ns, DMA184
|
INFINEON[Infineon Technologies AG]
|
M58LR128GU |
The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
|
ST Microelectronics, Inc.
|
K4R271669F |
128Mbit RDRAM(F-die)
|
SAMSUNG[Samsung semiconductor]
|
K4R271669E |
128Mbit RDRAM(E-die)
|
SAMSUNG[Samsung semiconductor]
|
K4R571669D |
256/288Mbit RDRAM(D-die)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
M29DW127G M29DW127G70NF6E |
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
|
Numonyx B.V
|
NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
K4R761869A-GCT9 K4R761869A-F K4R761869A-FBCCN1 K4R |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4R761869A-FBCCN1 K4R761869A-GCN1 K4R761869A-GCT9 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
VS28F016SV MS28F016SV |
16-Mbit (1-Mbit x 16/ 2-Mbit x 8) FlashFileTM MEMORY 16-Mbit FlashFileTM MEMORY 16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY 16兆位兆位× 16兆位× 8FlashFileTM记忆
|
Intel Corporation Intel Corp. Intel, Corp.
|